Fabrication of epitaxial In2O3(ZnO)5 thin films by RF sputtering and their characterization by X-ray and electron diffraction techniques-Reference-Cited by-同舟云学术

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Fabrication of epitaxial In2O3(ZnO)5 thin films by RF sputtering and their characterization by X-ray and electron diffraction techniques

Published:2002-04 Issue: Volume:237-239 Page:558-563
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohashi Naoki,Ogino Tsuyoshi,Sakaguchi Isao,Hishita Shunichi,Komatsu Mamabu,Takenaka Tadashi,Haneda Hajime

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Syntheses and Single-Crystal Data of Homologous Compounds, In2O3(ZnO)m (m = 3, 4, and 5), InGaO3(ZnO)3, and Ga2O3(ZnO)m (m = 7, 8, 9, and 16) in the In2O3-ZnGa2O4-ZnO System

2. Zinc‐indium‐oxide: A high conductivity transparent conducting oxide

3. Powder diffraction data and Rietveld refinement for Y-doped (ZnO)5In2O3

4. A modulated structure of ln2O3(ZnO)m as revealed by high-resolution electron microscopy

5. Structure analysis of new homologous compounds Ga2O3(ZnO) m (m = integer) by high-resolution analytical transmission electron microscopy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical characteristics with high accuracy of diluted Cr doped In2O3 thin films using spectroscopic ellipsometry for optoelectronic devices;Optical Materials;2022-11

2. Impact of composition on microstructural, electrical and optical properties of ZnO thin films incorporation by In ₂ O ₃ for solar cells;International Journal of Energy Research;2022-05-07

3. Bulk, interface and surface properties of zinc oxide;Journal of the Ceramic Society of Japan;2014

4. Review on Indium Zinc Oxide Films: Material Properties and Preparation Techniques;Materials Science Forum;2011-01

5. Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films;Advanced Materials;2010-01-12

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