Growth of InxGa1−xAs bulk mixed crystals with a uniform composition by the rotational Bridgman method-Reference-Cited by-同舟云学术

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Growth of InxGa1−xAs bulk mixed crystals with a uniform composition by the rotational Bridgman method

Published:2001-07 Issue:1-4 Volume:229 Page:124-129
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ozawa T.,Hayakawa Y.,Balakrishnan K.,Ohonishi F.,Koyama T.,Kumagawa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. K. Nakajima, T. Kusunoki, C. Takenaka, J. Crystal Growth 485.

2. T. Hibiya, H. Watanabe, H. Matsumoto, N. Iwata, J. Electrochem. Soc. 981.

3. K.J. Bachmann, F.A. Thiel, H. Schreiber, J.J. Rubin, J. Electron. Mater.

4. M. Ohmukai, H. Naito, M. Okuda, K. Kurosawa, J. Crystal Growth 152.

5. The growth of In-rich bulk single crystals of GaxIn1−xPyAs1−y via the gradient freeze method

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bulk Crystal Growth of Ternary III–V Semiconductors;Springer Handbook of Crystal Growth;2010

2. In situ observation of composition profiles in the solution by X-ray penetration method;Journal of Crystal Growth;2008-04

3. A modified zone growth method for an InGaAs single crystal;Journal of Crystal Growth;2005-07

4. Growth of InGaAs ternary bulk crystals by rotational Bridgman method;Journal of Crystal Growth;2005-02

5. InGaAs zone growth single crystal with convex solid–liquid interface toward the melt;Journal of Crystal Growth;2002-11

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