Characterization of the islands nucleation in LPOMVPE grown In0.2Ga0.8As/GaAs multilayer in the near substrate/buffer interfacial regions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Epitaxial Growth, Part B;Matthews,1975
2. Microstructural aspects of island nucleation process in elastically relaxed LPOMVPE grown In0.2Ga0.8As/GaAs multilayer
3. Coherent stress relaxation in a half space: Modulated layers, inclusions, steps, and a general solution
4. Dynamical Scattering of X-rays in Crystals;Pinsker,1978
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural anisotropy of InGaAs/GaAs(001) quantum dot chains structures;physica status solidi (a);2007-08
2. Non-coplanar reciprocal space mapping of In0.2Ga0.8As/GaAs multilayer: modelling of the composition and strain distribution;Journal of Physics D: Applied Physics;2003-04-29
3. Influence of Substrate Miscut on the Island Formation Process in In0.2Ga0.8As/GaAs Multilayers;Surface Review and Letters;2003-04
4. On the island nucleation process in LPOMVPE In0.2Ga0.8As/GaAs multilayers grown on GaAs and AlAs buffers;Thin Solid Films;2003-01
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