Thermally induced stress in GaN layers with regard to film coalescence
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition
2. Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
3. Dislocation generation in GaN heteroepitaxy
4. The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films
5. In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers
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