Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Index-Guide GaInNAs Laser Diode for Optical Communications
3. High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
4. Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
5. Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
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1. Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield;Journal of Electronic Materials;2020-09-03
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3. Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells;International Journal of Modern Physics B;2016-09-06
4. Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser;SPIE Proceedings;2015-03-16
5. Theoretical Study on Dilute Nitride 1.3 $\mu{\rm m}$ Quantum Well Semiconductor Optical Amplifiers: Incorporation of N Compositional Fluctuations;IEEE Journal of Quantum Electronics;2013-10
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