Growth of TiO2 thin films on Si(100) and Si(111) substrates using single molecular precursor by high-vacuum MOCVD and comparison of growth behavior and structural properties-Reference-Cited by-同舟云学术

Growth of TiO2 thin films on Si(100) and Si(111) substrates using single molecular precursor by high-vacuum MOCVD and comparison of growth behavior and structural properties

Published:2002-02 Issue:1-4 Volume:235 Page:450-456
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jung C.-K,Kang B.-C,Chae H.-Y,Kim Y.-S,Seo M.-K,Kim S.-K,Lee S.-B,Boo J.-H,Moon Y.-J,Lee J.-Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

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2. C-V characteristics of metal-titanium dioxide-silicon capacitors

3. R.J.G. Clark, Chemistry of Titanium and Vanadium, Elsevier, New York, 1968, pp. 266–277.

4. Thin TiO2 Films Prepared by Low Pressure Chemical Vapor Deposition

5. $\bf TiO_{2}$ Thin Films Formed by Electron Cyclotron Resonance Plasma Oxidation at High Temperature and Their Application to Capacitor Dielectrics

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