Heat transfer and kinetics of bulk growth of silicon carbide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Investigation of growth processes of ingots of silicon carbide single crystals
2. The status of SiC bulk growth from an industrial point of view
3. Growth of large SiC single crystals
4. Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation
5. Sublimation Growth of 50mm Diameter SiC Wafers
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1. Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique;CrystEngComm;2022
2. Growth and Stress Analysis of Spontaneous Nucleation c -Plane Bulk AlN Crystals by a PVT Method;Crystal Research and Technology;2020-08-19
3. Numerical Simulation of Temperature Fields in a Three-Dimensional SiC Crystal Growth Furnace with Axisymmetric and Spiral Coils;Applied Sciences;2018-05-02
4. Silicon carbide particle formation/engulfment during directional solidification of silicon;International Journal of Heat and Mass Transfer;2016-08
5. Growth of Silicon Carbide;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14
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