Morphology of silicon carbide formed by chemical vapour deposition-Reference-Cited by-同舟云学术

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Morphology of silicon carbide formed by chemical vapour deposition

Published:1977-01 Issue:2 Volume:3 Page:43-52
ISSN:0390-5519
Container-title:Ceramurgia International
language:en
Short-container-title:Ceramurgia International

Author:

Pampuch R.,Stobierski L.

Publisher

Elsevier BV

Subject

General Engineering

Reference48 articles.

1. Interferometric Determination of Twist and Polytype in Silicon Carbide Whiskers

2. Proc. 3rd Intern, Conf. Silicon Carbide;Knippenberg,1973

3. Protsessy rosta i sinteza poluprovodnikovykh kristallov i plenok;Kuznetsov,1975

4. Proc. 3rd Intern. Conf. Silicon Carbide;Wessels,1973

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC layer microstructure in AGR-1 and AGR-2 TRISO fuel particles and the influence of its variation on the effective diffusion of key fission products;Journal of Nuclear Materials;2016-11

2. Silicon Carbide;Kirk-Othmer Encyclopedia of Chemical Technology;2006-09-15

3. Synthesis of One-Dimensional Nanostructured Silicon Carbide by Chemical Vapor Deposition;Glass Physics and Chemistry;2005-05

4. Formation of isotope controlled SiC thin film by plasma chemical vapor deposition and its characterization;Applied Surface Science;2005-02

5. Modeling the crystal growth of cubic silicon carbide by molecular dynamics simulations;MRS Proceedings;2002

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