Modeling and Simulation of Gated Memristor-Reference-Cited by-同舟云学术

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Modeling and Simulation of Gated Memristor

Published:2020 Issue: Volume:24 Page:1777-1787
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Amarnath N.,Ramakrishnan V.N.

Publisher

Elsevier BV

Subject

General Medicine

Reference17 articles.

1. Memristor – the Missing Circuit Element;Chua;IEEE Transactions on Circuit Theory,1971

2. Memristive switching mechanism for metal/oxide/metal nanodevices;Yang;Nature nanotechnology,2008

3. Memristive systems analysis of 3-terminal devices;Mouttet,2010

4. “TEAM: Threshold Adaptive Memristor Model,” submitted to;Kvatinsky;IEEE Transactions on Circuits and Systems I: Regular Papers,2012

5. Verilog-A compact model for oxide-based resistive random access memory (RRAM);Jiang,2014

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A gate‐tunable memristor emulator for motion detection;International Journal of Circuit Theory and Applications;2023-12-04

2. Performance Evaluation of Low Power Hybrid Combinational Circuits using Memristor;International Journal of Electrical and Electronics Research;2022-12-30

3. Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia;Nanomaterials;2021-03-08

4. Complex Frequency Domain Analysis of Memristor Based on Volterra Series;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2021

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