Author:
Arslan K.O.,Aksakal R.,Cakmak B.
Reference8 articles.
1. Coherent Light Emission From GaAs Junctions
2. 1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation
3. A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>
4. G.H.B. Thompson, Physics of Semiconductor Laser Devices, John Wiley & Sons, Chishester, 1980.
5. B. Cakmak, Fabrication and Characterisation of InP and GaAs Based Optoelectronic Components, Ph.D. Thesis, Department of Electrical And Electronic Engineering University of Bristol, Bristol, United Kingdom, 2000.
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