Memristiv effect on W/Ti/p-Si structure: Aging phenomena and one of the origin of barrier inhomogeneity-Reference-Cited by-同舟云学术

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Memristiv effect on W/Ti/p-Si structure: Aging phenomena and one of the origin of barrier inhomogeneity

Published:2021 Issue: Volume:46 Page:7033-7039
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Efeoglu Hasan

Publisher

Elsevier BV

Subject

General Medicine

Reference40 articles.

1. Aging effects in Si‐doped Al Schottky barrier diodes

2. Environmental aging of Schottky contacts to n-AlGaN

3. Aging of Schottky diodes formed on air‐exposed and atomically clean GaAs surfaces: An electrical study

4. M. Schubler, V. Krozer, K.H. Bock, M. Brandt, L. Vecci, R. Losi, H.I. Hartnagel, Microelectron. Reliab. 36 11/12 (1996) 1907-1910.

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