Physics based model for potential distribution and threshold voltage of gate-all-around tunnel field effect transistor (GAA-TFET)
Author:
Funder
Department of Science and Technology, New Delhi, Government of India
Publisher
Elsevier BV
Subject
General Medicine
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1. TFET: From Material to Device Perspective;Springer Tracts in Electrical and Electronics Engineering;2024
2. SiGe vertical NW GAA TFET with improved current and low leakage;Materials Today: Proceedings;2022
3. Simulation insights of a new dual gate graphene nano-ribbon tunnel field-effect transistors for THz applications;Diamond and Related Materials;2022-01
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