Free and bound charge carriers dependent Raman susceptibilities in weakly-polar magnetoactive semiconductors-Reference-Cited by-同舟云学术

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Free and bound charge carriers dependent Raman susceptibilities in weakly-polar magnetoactive semiconductors

Published:2021 Issue: Volume:46 Page:5844-5851
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Singh Jaivir,Dahiya Sunita,Singh Manjeet

Publisher

Elsevier BV

Subject

General Medicine

Reference34 articles.

1. NONLINEAR EFFECTS IN IMAGE FORMATION

2. Optical Waves in Crystals;Yariv,1984

3. Nonlinear optical properties of semiconductor nanocrystals

4. Quantum Theory of the Optical and Electronic Properties of Semiconductors;Haug,2004

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Steady-State and Transient Raman Gain Coefficients of Semiconductor Magneto-plasmas (Calculated for n-InSb-CO2 Laser System);Iranian Journal of Science and Technology, Transactions A: Science;2022-01-13

2. Steady-state and transient Raman gain coefficients of weakly-polar magnetoactive doped semiconductors;Materials Today: Proceedings;2022

3. Enhanced Raman gain coefficients (under steady-state and transient regimes) of semiconductor magnetoplasmas;Pramana;2021-11-30

4. Raman amplification in magnetoactive doped III-V semiconductors;Journal of Optics;2021-08-19

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