Author:
Sonia C.,Tamilselvi S.,Visvesvaran C.
Reference17 articles.
1. An Experimental investigation of the tradeoff between switching losses and emi generation with hard-switched All-Si, Si-SiC, and All-SiC device combinations;Oswald;IEEE Trans. Power Electron.,2014
2. S. Basu and T. M. Undeland, On understanding switching and EMI performance of SiC power JFETs to design a 75 W high voltage flyback converter, Power Electronics and Applications (EPE), 2013 15th European Conference on, Lille, 2013, 1-5.
3. Enhancing network-on-chip performance by 32-bit RISC processor based on power and area efficiency;Soundari;Mater. Today Proc.,2020
4. S. Yipeng, Z. Wenli, L. Qiang, F. C. Lee, and M. Mingkai, High frequency integrated Point of Load (POL) module with PCB embedded inductor substrate, in Energy Conversion Congress and Exposition (ECCE), 2013 IEEE, 2013, 1243-1250.
5. C. G. Bright, COROCOF: Comparison of rate of change of frequency protection. A solution to the detection of loss of mains, in Proc. Int.Conf. Developments in Power System Protection, 2001, 70–73.