Design of down conversion ring mixer using 45 nm Metal gate High-K Strained-Si CMOS Technology for RF applications

Author:

Chaturvedi AbhayORCID

Publisher

Elsevier BV

Subject

General Medicine

Reference16 articles.

1. Ultra-low-LO-power X-band down-conversion ring mixer using weak-inversion biasing technique;Tsai;Electron. Lett.,2018

2. Tsai, Jeng Han, Design of 40-108-GHz Low-Power and High-Speed CMOS up-/down-Conversion Ring Mixers for Multistandard MMW Radio Applications, IEEE Transactions on Microwave Theory and Techniques, 60.3 PART 2 (2012), 670–78.

3. T. Chang, J. Lin, 1-11 GHz Ultra-Wideband Resistive Ring Mixer in 0.18-/Spl Mu/m CMOS Technology, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006, 1–4.

4. Raj, Manu, Sandeep Chaturvedi, Mohd Sazid, S. L. Badnikar, B. K. Sehgal, A Very Wideband FET Resistive MMIC Double Balanced Mixer Based on Empirical Non-Linear Cold FET Model, IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015, 2016, 305–8.

5. Chen, Jung Hau, Che Chung Kuo, Yue Ming Hsin, and Huei Wang, A 15-50 GHz Broadband Resistive FET Ring Mixer Using 0.18-Μm CMOS Technology, IEEE MTT-S International Microwave Symposium Digest, 2010, 784–87.

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 25–40 GHz Low Conversion Loss Passive Ring Mixer in a 45 nm CMOS Silicon-on-Insulator Technology;2023 5th International Conference on Electronic Engineering and Informatics (EEI);2023-06-30

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