Stain etching of silicon with V2O5 and FeCl3: Effect of etching time on photoluminescence-Reference-Cited by-同舟云学术

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Stain etching of silicon with V2O5 and FeCl3: Effect of etching time on photoluminescence

Published:2020 Issue: Volume:26 Page:3193-3196
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Juyal Sakshi,Kumar Yogesh,Prasad Brijesh^ORCID,Panwar Varij^ORCID,Dhiman Neeraj,Nithin Kumar K.C.,Gill Fateh Singh

Publisher

Elsevier BV

Subject

General Medicine

Reference25 articles.

1. Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications;Lehmann,2002

2. Porous Silicon in Practice: Preparation, Characterization and Applications;Sailor,2012

3. High efficiency chemical etchant for the formation of luminescent porous silicon;Kelly;Appl. Phys. Lett.,1994

4. The impact of sonication on the structure and properties of stain-etch porous silicon;Chandler-Henderson;J. Electrochem. Soc.,1994

5. Charge transfer and nanostructure formation during electroless etching of silicon;Kolasinski;J. Phys. Chem. C,2010

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of annealing temperature towards properties of black silicon fabricated by aluminium-assisted chemical etching;Materials Science in Semiconductor Processing;2021-10

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