Bottom metal strip based ferroelectric Schottky Barrier MOSFET

Author:

Salam Rumisa,Bashir Faisal,Rashid Shazia,Khanday Farooq A

Publisher

Elsevier BV

Subject

General Medicine

Reference15 articles.

1. W. Saitoh, A. Itoh, S. Yamagami, and M. Asada, “Analysis of short-channel Schottky source/drain metal oxide semiconductor field-effect transistor on silicon-on-insulator substrate 99and demonstration of sub-50-nm n-type devices with metal gate,” Jpn. J. Appl. Phys., vol. 38, no. 11, pp. 6226–6231, Nov. 19.

2. Schottky source/drain SOI MOSFET with shallow doped extension;Nishisaka;Jpn. J. Appl. Phys.,2003

3. Dual Material Tri-Gate Schottky Barrier MOSFET;Rashid,2022

4. 2-D design of double gate Schottky tunnel MOSFET for high-performance use in analog/RF applications;Rashid;IEEE Access,2021

5. F. Bashir, F. A. Khanday, M. T. Banday, and A. M. Murshid, “Silicon on insulator junctionless transistor with high work function metal under buried oxide layer.” InFifth International Conference on Nanotechnology for better living (ICNBL-2019). 2019.

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