Effect of B doping on electrical and thermal properties of SiC bodies fabricated by spark plasma sintering
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference19 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Physical Properties of SiC
3. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC
4. Thermal Conductivity of Pure and Impure Silicon, Silicon Carbide, and Diamond
5. Electrical and thermal properties of off-stoichiometric SiC prepared by spark plasma sintering
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1. Insights on the pulsed-DC powder-pack boriding process: The role of the electric charge on the growth of the boride layer and the semiconductor behavior of the boriding media;Surface and Coatings Technology;2024-03
2. Improving specific stiffness of silicon carbide ceramics by adding boron carbide;Journal of the European Ceramic Society;2022-12
3. Effect of nitride addition on the electrical and thermal properties of pressureless solid-state sintered SiC ceramics;Journal of the Korean Ceramic Society;2022-02-17
4. Effects of initial α‐phase content on properties of pressureless solid‐state sintered SiC ceramics;International Journal of Applied Ceramic Technology;2021-09-25
5. Pressureless solid-state sintering of SiC ceramics with BN and C additives;Journal of Asian Ceramic Societies;2021-07-03
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