Comparison of electrical characteristics of Sn/p-type Si structure at different temperatures and under irradiation
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference40 articles.
1. Enhancement in electrical properties of Au/n-GaAs Schottky diodes exposed to 60Co gamma rays
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4. Electrical properties of Sn/p-Si (MS) Schottky barrier diodes to be exposed to 60Co γ-ray source
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1. Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer;Journal of Materials Science: Materials in Electronics;2022-08
2. The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures;Journal of Materials Science: Materials in Electronics;2020-06-22
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