A High Voltage PIN Diode Design on SOI Substrate-Reference-Cited by-同舟云学术

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A High Voltage PIN Diode Design on SOI Substrate

Published:2019 Issue: Volume:18 Page:1826-1835
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Tangel Ali,Ulvi Çalışkan Aziz

Publisher

Elsevier BV

Subject

General Medicine

Reference13 articles.

1. SKYWORKS Application Note-Design With PIN Diodes, SKYWORKS, pp. 1-19, 2002-2009. (http://www.skyworksinc.com/uploads/documents/200312C.pdf, (visiting date 20.07.2012)

2. Diode Fundamentals”, MicroNote Series701, Microsemi Corporation. (http://www.microsemi.com/en/sites/default/files/micnotes/701.pdf, (visiting;Doherty;date,2012

3. www.microwavejournal.com/articles/print/20694-shunt-pin-diodes, (visiting date 24.07.2018)

4. http://cdn.macom.com/datasheets/MADP-011029.pdf, (visiting date 24.07.2018)

5. Z. J. Li, B. Zhang, X.R. Luo S.D. Hu, J. Fang, Z.H. Li, M. Qiao, Y. F. Guo, “ The Rule of Field Enhancement for Buried Dielectric Layer of SOI High Voltage Devices”, IEEE 2007 International Conference on Communications, Circuits and Systems, pp. 1302-1305, 2007

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A novel design of a silicon PIN diode for increasing the breakdown voltage;IET Circuits, Devices & Systems;2022-06-06

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