Tuning the Fermi-level of MoOx by plasma-enhanced ALD for carrier selective contact solar cell application-Reference-Cited by-同舟云学术

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Tuning the Fermi-level of MoOx by plasma-enhanced ALD for carrier selective contact solar cell application

Published:2024-01 Issue: Volume: Page:
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Maurya Rajesh,Dsouza Namitha,Singh Ashish K.,Bandaru Narendra,Kanakala Rajesh,Seraj Uddin Md.,Madaka Ramakrishna,Roy Somnath C.,Rath Jatindra K.^ORCID

Publisher

Elsevier BV

Reference18 articles.

1. T, Growth angle-dependent tunable work function and optoelectronic properties of MoOx thin films;Singh;Appl. Surf. Sci.,2020

2. Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies;Greiner;Adv. Funct. Mater.,2012

3. Silicon heterojunction solar cell with passivated hole selective MoOx contact;Battaglia;Appl. Phys. Lett.,2014

4. Molybdenum oxide: A superior hole extraction layer for replacing p-type hydrogenated amorphous silicon with high efficiency heterojunction Si solar cells;Mallem;Mater. Res. Bull.,2019

5. Performance Analysis of Silicon Carrier Selective Contact Solar Cells With ALD MoOx as Hole Selective Layer;Tyagi;SILICON,2022

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