Effect of natural convection and thermal transparency of liquid encapsulant on thermal stresses during LEG growth of GaAs

Author:

Motakef Shahryar

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference13 articles.

1. High purity LEG growth and direct implantation of GaAs for monolithic microwave circuits;Kirkpatrick,1984

2. Defect structure introduced during operation of heterojunction GaAs laser;Petroff;Appl. Phys. Lett,1973

3. LEG growth and characterization of undoped InP crystals;Uemura;J. Crystal Growth,1981

4. The theory and practice of dislocation reduction in GaAs and InP;Jordan;J. Crystal Growth,1984

5. A thermoelastic analysis of dislocation generation in pulled GaAs crystals;Jordan;Bell Syst. Tech. J,1980

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Numerical simulation of flow structures and instabilities occurring in a liquid‐encapsulated Czochralski process;Physics of Fluids A: Fluid Dynamics;1991-10

2. A Comparative Study of Thermal Conditions at Onset of Plastic Flow in Various Semiconductors;JSME international journal. Ser. 2, Fluids engineering, heat transfer, power, combustion, thermophysical properties;1991

3. Global modelling of heat transfer in crystal growth furnaces;International Journal of Heat and Mass Transfer;1990-09

4. Thermoelastic analysis of GaAs in LEC growth configuration;Journal of Crystal Growth;1989-06

5. Thermoelastic analysis of GaAs in LEC growth configuration;Journal of Crystal Growth;1989-05

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