The calculation of the chemical diffusion coefficient for pure and mixed oxides with a simple defect structure. II. Numerical applications
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lattice and Grain-Boundary Diffusion Processes Involved in the High-Temperature Oxidation and Sulfidation of Metals and Alloys;Selected Topics in High Temperature Chemistry - Defect Chemistry of Solids;1989
2. Transport properties of p-type semiconducting oxides—influence of aliovalent impurities;Journal of Physics and Chemistry of Solids;1987
3. Comparison between the apparent chemical diffusion coefficient evaluated from relaxation experiments by means of electrical conductivity changes and the corresponding theoretical value for a pure and doped p-type oxide;Oxidation of Metals;1985-04
4. Kinetics of equilibration in relaxation-type measurements under partial rate control by a surface reaction following a general type of rate law. I: The direct problem;Oxidation of Metals;1985-02
5. The calculation of the chemical diffusion coefficient for p-type oxides doped with aliovalent impurities;Journal of Physics and Chemistry of Solids;1985-01
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