Amplification enhancement of L-band erbium-doped fiber amplifiers by reflection scheme-Reference-Cited by-同舟云学术

Amplification enhancement of L-band erbium-doped fiber amplifiers by reflection scheme

Published:2002-01 Issue:1-3 Volume:201 Page:61-69
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Mao Qinghe,Lit John W.Y

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. High gain, broadband, 1.6 μm Er3+ doped silica fibre amplifier

2. Gain-flattened Er/sup 3+/-doped fiber amplifier for a WDM signal in the 1.57-1.60-μm wavelength region

3. Broadband and gain-flattened amplifier composed of a 1.55 [micro sign]m-band and a 1.58 [micro sign]m-band Er3+-doped fibre amplifier in a parallel configuration

4. Gain saturation behavior in L-band EDFAs

5. 1.58 [micro sign]m band Er3+-doped fibre amplifier pumped in the 0.98 and 1.48 [micro sign]m bands

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4. Analysis of Amplification Characteristics of Surface Plasmon Polaritons Based on the Rate-Equation Theory;IEEE Journal of Quantum Electronics;2014-11

5. Reliable Wavelength Locking of a Distributed Feedback Diode Laser for an Efficient Erbium Doped Fiber Amplifier in Reflective Configuration;International Journal of Optomechatronics;2012-07