Depth profile of the lattice constant of the Cu-poor surface layer in (Cu2Se)1−x(In2Se3)x evidenced by grazing incidence X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference14 articles.
1. Model for electronic transport in Cu(In,Ga)Se2 solar cells
2. Device Analysis of Cu(In,Ga)Se2 Heterojunction Solar Cells - Some Open Questions
3. Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2
4. Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se2
5. I.M. Kötschau, PhD-Thesis, Universität Stuttgart, Stuttgart, 2002.
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