On the theory of light absorption at interband transitions in heavily doped semiconductors-Reference-Cited by-同舟云学术

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On the theory of light absorption at interband transitions in heavily doped semiconductors

Published:1969-05 Issue:2 Volume:1 Page:73-77
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Rosman R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Statistical mechanics;Huang,1963

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Essential singularities and Wegner's inequality γ⩽1 for the averaged Green's function of an electron in a random potential;Journal of Physics C: Solid State Physics;1981-04-20

2. Theory of Electro-Absorption in Heavily Doped Semiconductors;physica status solidi (b);1975-08-01

3. Behaviour of the charge carriers in a random force field and some problems of the electronic theory of disordered semiconductors;La Rivista del Nuovo Cimento;1973-10

4. Behaviour of the charge carriers in slowly varying random field and semiphenomenological approach to the theory of electronic processes in disordered systems;Journal of Non-Crystalline Solids;1970-04

5. Interband optical transitions in disordered semiconductors;physica status solidi (b);1970

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