Hologram recording in GaAs through EL2 intracentre absorption
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 mu m
2. Photoelectric memory effect in GaAs
3. Intracenter transitions in the dominant deep level (EL2) in GaAs
4. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High optical power dependence of the EL2 recovery in GaAs;Optics Communications;2006-02
2. Direct determination of EL2 thermal recovery rate at 300 K;Optics Communications;2001-10
3. Observation of EL2 and additional deep levels at low temperature in an AlGaAs/GaAs multiple-quantum-well structure;Applied Physics Letters;2000-07-31
4. Optical nonlinearities at transient quenching of EL2 defect at room temperature;Optics Communications;1999-10
5. Photorefractive effect in GaAs at low temperature: influence of the metastable state of the EL2 defect;Optical Materials;1995-01
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