Nonlinear optical devices based on a transparency in semiconductor intersubband transitions-Reference-Cited by-同舟云学术

Nonlinear optical devices based on a transparency in semiconductor intersubband transitions

Published:1996-11 Issue:4-6 Volume:131 Page:333-338
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Schmidt H.,Imamoǧlu A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Observation of extremely large quadratic susceptibility at 9.6–10.8μm in electric-field-biased AlGaAs quantum wells

2. Observation of large second order susceptibility via intersubband transitions at λ∼10 μm in asymmetric coupled AlInAs/GaInAs quantum wells

3. High conversion efficiency of second‐harmonic generation in step quantum wells

4. Short wavelength (5.36–1.85 μm) nonlinear spectroscopy of coupled InGaAs/AlAs intersubband quantum wells

5. Tunable mid‐infrared generation by difference frequency mixing of diode laser wavelengths in intersubband InGaAs/AlAs quantum wells

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