Determination of the effective g-value of n-InAs by four-wave mixing spectroscopy
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Optical Nonlinearities due to Mobile Carriers in Semiconductors
2. Dispersion of the Nonlinear Optical Susceptibility inn−InSb
3. Spin resonant optical mixing in InSb — CW-measurements and transient effects
4. Light Scattering by Plasmons and Landau Levels of Electron Gas in InAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spin-Flip Raman Scattering;Landau Level Spectroscopy;1991
2. g factor spectroscopy in narrow-gap semiconductors by optical four-wave mixing;Semiconductor Science and Technology;1990-03-01
3. Electrons and holes in InSb under crossed magnetic and stress fields. II. Recombination radiation;Physical Review B;1988-06-15
4. Optical four-wave mixing in epitaxial narrow-gap semiconductor films;Applied Physics B Photophysics and Laser Chemistry;1984-07
5. Spin- cyclotron- and combined spin-flip- resonances of four wave mixing in Hg1-xCdxTe;Optics Communications;1983-07
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