Time-resolved X-ray diffraction from silicon during pulsed laser annealing-Reference-Cited by-同舟云学术

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Time-resolved X-ray diffraction from silicon during pulsed laser annealing

Published:1986-06 Issue:4 Volume:58 Page:269-272
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Lunney J.G.,Dobson P.J.,Hares J.D.,Tabatabaei S.D.,Eason R.W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

2. Soft-X-ray spectroscopic diagnostics of laboratory plasmas

3. L. Koppel and M. Boyle, private communication.

4. X-ray diffraction;Warren,1969

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