Properties of normal metal/dielectric/high-Tc junctions obtained by in-situ oxidation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Temperature dependence of the in-plane penetration depth ofYBa2Cu3O6.95andYBa2(Cu0.9985Zn0.0015)3O6.95crystals fromTtoT2
2. Anomalously large gap anisotropy in thea-bplane ofBi2Sr2CaCu2O8+δ
3. Reproducible tunneling data on chemically etched single crystals ofYBa2Cu3O7
4. Tunnel gap structure and tunneling model of the anisotropic YBaCuO/I/Pb junctions
5. Vacuum tunneling spectroscopy and asymmetric density of states ofBi2Sr2CaCu2O8+δ
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