Laser deposited YBa2Cu3O7 films on silicon with yttria stabilized zirconia buffer layers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. High critical currents in strained epitaxial YBa2Cu3O7−δon Si
2. Epitaxial YBa2Cu3O7−δ films on silicon using combined YSZ/Y2O3 buffer layers
3. Characterization of different (Me,Zr)O2 single crystals grown by the “skull-melting” technique
4. Crystal structure of the YBa2Cu3O7 superconductor by single-crystal X-ray diffraction
5. Buffer layers of yttria stabilized zirconia for YBa2Cu3O7 devices on silicon substrates
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of plume fluence for laser ablation of yttria stabilized zirconia in mixed oxygen and argon environments;Surface and Coatings Technology;2001-09
2. Structure control of pulsed laser deposited ZrO2/Y2O3 films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-07
3. Structural modification of single-axis-oriented yttria-stabilized-zirconia films under zirconium ion bombardment;Applied Physics Letters;2001-02-05
4. On ageing and critical thickness of YBa2Cu3O7 films on Si with CeO2/YSZ buffer layers;Thin Solid Films;1999-01
5. Nonepitaxial growth of oxide films;Technical Physics;1997-03
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