HREM of epitaxial layers in the InAs/GaAs system-Reference-Cited by-同舟云学术

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HREM of epitaxial layers in the InAs/GaAs system

Published:1991-01 Issue:1 Volume:35 Page:11-18
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Karasev V.Yu.,Kiselev N.A.,Orlova E.V.,Gribelyuk M.A.,Gutakovsky A.K.,Kanter Yu.O.,Pintus S.M.,Rubanov S.V.,Stenin S.I.,Fedorov A.A.

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Defects associated with the accommodation of misfit between crystals

2. Morphological transformations of thin heteroepitaxial films

3. Study of the growth mechanism of modulated structures in the InAsGaAs system

4. Study of InGaAsGaAs strained-layer superlattices by TEM and RBS techniques

5. EUREM 88;Gutakovski;Inst. Phys. Conf. Ser.,1988

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1. Atomic Structure of Semiconductor Low-Dimensional Heterosystems;Advances in Semiconductor Nanostructures;2017

2. Structure and morphology of InSb epitaxial films in the AlAs matrix;Nanotechnologies in Russia;2016-01

3. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface;Physics of the Solid State;2011-10

4. Formation of misfit edge dislocations in Ge x Si1 − x films (x ∼ 0.4–0.5) grown on tilted Si(001) → (111) substrates;Physics of the Solid State;2008-10

5. Application of high-resolution electron microscopy for visualization and quantitative analysis of strain fields in heterostructures;Bulletin of the Russian Academy of Sciences: Physics;2007-10

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