A new metastable epitaxial silicide: FeSi2/Si(111)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Epitaxial silicide interfaces: Fabrication and properties
2. Ballistic electron emission in silicide–silicon interfaces
3. Structure and electronic properties of epitaxially grown silicides
4. The Fe/Si(100) interface
5. J. Alvarez, J.J. Hinarejos, E.G. Michel, G.R. Castro and R. Miranda, Phys. Rev. B, submitted.
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1. α-FeSi2 as a Buffer Layer for β-FeSi2 Growth: Analysis of Orientation Relationships in Silicide/Silicon, Silicide/Silicide Heterointerfaces;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-07
2. Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2020-05-22
3. Growth process and magnetic properties of iron nanoparticles deposited on Si3N4/Si(111)-(8×8);Physical Review B;2012-05-14
4. The solid state reaction of Fe with the Si(111) vicinal surface: splitting of bunched steps;Nanotechnology;2008-04-15
5. Iron silicides grown by solid phase epitaxy on aSi(111)surface: Schematic phase diagram;Physical Review B;2006-10-04
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