Annealing effects on hydrogen, oxygen and nitrogen bonding in sputtered a-Si network-Reference-Cited by-同舟云学术

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Annealing effects on hydrogen, oxygen and nitrogen bonding in sputtered a-Si network

Published:1993-01 Issue:1 Volume:223 Page:167-172
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Talukder G.,Cornish J.C.L.,Jennings P.,Hefter G.T.,Jain M.,Robins J.L.,Livingstone J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Stability of amorphous silicon photoreceptor for diode laser printer application

2. Memory switching in amorphous silicon devices

3. The characteristics and properties of optimised a-Si FETs and their application in integrated image sensors

4. Recent advances in amorphous silicon solar cells and their technologies

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of a-Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts;physica status solidi (a);2016-02-25

2. A study of the effects of annealing and outgassing on hydrogenated amorphous silicon;Thin Solid Films;1997-11

3. Studies of photodegradation in hydrogenated amorphous silicon;Thin Solid Films;1996-11

4. Bond switching, Si-H cluster formation and hydrogen effusion upon thermal annealing in hydrogenated amorphous silicon thin films;Thin Solid Films;1995-12

5. Optical and strucutral properties of hydrogen implanted silicon carbon alloys;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1995-03

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