Fabrication of extremely thin silicon on insulator for fully-depleted CMOS applications-Reference-Cited by-同舟云学术

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Fabrication of extremely thin silicon on insulator for fully-depleted CMOS applications

Published:1993-09 Issue:1 Volume:232 Page:105-109
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bindal A.,Rovedo N.,Restivo J.,Galli C.,Ogura S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. TEM analysis of SIMOX produced by multiple implantation and annealing;Seraphin,1991

2. Effect of implantation energy on surface pitting of SIMOX;Namavar,1991

3. Reduction of dislocations in SIMOX film by controlling the annealing sequence;Nakai,1991

4. Defects in SIMOX structures: some process dependence

5. T. Ito and Y. Nakazato, US Patent 5 032 544, 1991.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploratory study on power-efficient silicon nano-wire dynamic NMOSFET/PMESFET logic;IET Science, Measurement & Technology;2007-03-01

2. Static NMOS circuits for crossbar architectures using silicon nano-wire technology;Semiconductor Science and Technology;2006-12-05

3. The design and analysis of dynamic NMOSFET/PMESFET logic using silicon nano-wire technology;Semiconductor Science and Technology;2006-06-20

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