Structure, optical and electrical properties of silicon-rich silicon nitride films-Reference-Cited by-同舟云学术

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Structure, optical and electrical properties of silicon-rich silicon nitride films

Published:1976-03 Issue:2 Volume:32 Page:339-342
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Voskoboynikov V.V.,Gritsenko V.A.,Dikovskaya N.D.,Zaitsev B.N.,Mogilnicov K.P.,Osadchii V.M.,Sinitsa S.P.,Edelman F.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Effect of Electron Radiation on Silicon Nitride Insulated Gate Field Effect Transistors

2. The structure of amorphous silicon nitride films

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational and dielectric properties of α-Si3N4 from density functional theory;Materials Chemistry and Physics;2014-09

2. First-principles simulations of atomic networks and optical properties of amorphousSiNxalloys;Physical Review B;2003-11-05

3. Atomic topology and radial distribution functions of a-SiNx alloys: ab initio simulations;Solid State Communications;2003-08

4. Angular dependences of surface composition, sputtering and ripple formation on silicon under N2+ ion bombardment;Vacuum;2000-03

5. Analysis of defect formation in Si3N4 films;Inorganic Materials;2000-02

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