Formation of thin Si3N4 films by nitrogen ion implantation into silicon-Reference-Cited by-同舟云学术

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Formation of thin Si3N4 films by nitrogen ion implantation into silicon

Published:1979-04 Issue:2 Volume:58 Page:300
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yadav A.D.,Joshi M.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IR and x-ray studies of ion-beam-synthesized aluminium nitride films;Thin Solid Films;1986-04

2. The synthesis of tellurium oxide by high dose oxygen ion-implantation;Applications of Surface Science;1985-05

3. The dielectric breakdown properties, current density-voltage and capacitance-voltage characteristics of ion-beam-synthesized Si3N4 layers;Thin Solid Films;1983-04

4. IR and electrical properties of thin silicon oxynitride films synthesized by ion implantation;Thin Solid Films;1982-05

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