On a diffusion mechanism of intrinsic stress relaxation in AuGeGaAs contacts-Reference-Cited by-同舟云学术

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On a diffusion mechanism of intrinsic stress relaxation in AuGeGaAs contacts

Published:1994-01 Issue:1 Volume:238 Page:51-53
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tkhorik Yu.A.,Vdovin V.I.,Khazan L.S.,Konakova R.V.,Milenin V.V.,Naumovets A.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Advances in understanding metal-semiconductor interfaces by surface science techniques

2. Auger electron and X-ray spectroscopic analysis of AuGe contacts to GaAs

3. Fundamentals of Surface and Thin Film Analysis;Feldman,1986

4. Theory of Phase Transformations and Solid Solutions' Structure;Khachaturyan,1974

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system;Semiconductor Physics, Quantum Electronics and Optoelectronics;2001-12-12

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