Studies on electron transport properties and the Burstein-Moss shift in indium-doped ZnO films-Reference-Cited by-同舟云学术

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Studies on electron transport properties and the Burstein-Moss shift in indium-doped ZnO films

Published:1991-10 Issue:2 Volume:204 Page:255-264
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sarkar A.,Ghosh S.,Chaudhuri S.,Pal A.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Progress on high efficiency thin film solar cells

2. Electrical and optical properties of zinc oxide thin films prepared by rf magnetron sputtering for transparent electrode applications

3. Preparation of transparent conducting zinc oxide films by reactive sputtering

4. Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering

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4. Investigation of electronic structure and optoelectronic properties of Si-doped <i>β</i>-Ga<sub>2</sub>O<sub>3 </sub>using GGA+<i>U</i> method based on first-principle;Acta Physica Sinica;2024

5. Invesigation of the electronic structure and Optoelectronic properties of Si-doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> using GGA+U method based on first-principle;Acta Physica Sinica;2023

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