Observations on aluminum diffusion and its effect on the specific contact resistance of Al/W/Si ohmic contact-Reference-Cited by-同舟云学术

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Observations on aluminum diffusion and its effect on the specific contact resistance of Al/W/Si ohmic contact

Published:1989-09 Issue:1 Volume:176 Page:91-97
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Fang Y.K.,Yang H.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Contact Resistance of LPCVD W/Al and p+Si/W/Si metallization;Swirhun;IEEE Electron Device Lett.,1984

2. Fabrication and Thermal Stability of W/Si Ohmic Contacts;Kumar;J. Electrochem. Soc.,1976

3. Equipment Changes Seen for the Factory Future;Dan Hutcheson;Semicond. Int.,1986

4. VLSI Technology;Sze,1983

5. Silicides for MOS Gate and Interconnection in Integrated-Circuit Technology;Mohammadi,1980

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