Schottky contacts on rapidly thermally annealed GaAs-Reference-Cited by-同舟云学术

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Schottky contacts on rapidly thermally annealed GaAs

Published:1990-05 Issue:1 Volume:187 Page:19-24
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kalkur T.S.,Lu Y.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Thermal conversion of GaAs;Klein;J. Appl. Phys.,1980

2. Outdiffusion of main electronic trap in bulk GaAs due to thermal transient;Makram-Ebeid;Appl. Phys. Lett.,1982

3. Heat cycling of un-passivated GaAs surfaces;Morgan;Phys. Status Solidi A,1974

4. Schottky contacts on annealed GaAs;Miles,1984

5. Rapid thermal processing in GaAs I.C. processing;Pearton;J. Electrochem. Soc.,1985

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