Electrical and optical properties of ion-beam- sputtered amorphous silicon-germanium alloy films-Reference-Cited by-同舟云学术

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Electrical and optical properties of ion-beam- sputtered amorphous silicon-germanium alloy films

Published:1991-08 Issue:1 Volume:203 Page:23-32
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bhan Mohan Krishan,Malhotra L.K.,Kashyap Subhash C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Amorphous Silicon Semiconductors—Pure and Hydrogenated,1987

2. The Physics and Applications of Amorphous Semiconductors,1988

3. Electronic Processes in Non-crystalline Materials;Mott,1979

4. The Physics of Hydrogenated Amorphous Silicon I and II,1984

5. Amorphous Semiconductor Technologies and Devices,1984

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An expedient semi-empirical modelling approach for optimal bandgap profiling of stoichiometric absorbers: A case study of thin film amorphous silicon germanium for use in multijunction photovoltaic devices;Solar Energy Materials and Solar Cells;2021-06

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