High pressure oxidation of Si(100) for production of ultrathin oxide metal-insulator-semiconductor diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Proc. 2nd Int. Workshop on Physics of Semiconductor Devices;Ruzyllo,1984
2. Silicon Oxidation Studies: Analysis of SiO2 Film Growth Data
3. MIS solar cells: A review
4. MIS solar cell—General theory and new experimental results for silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunneling through thin oxide interface layers ina‐Si:H Schottky diodes;Journal of Applied Physics;1992-05
2. Tunnel oxides in AlSiOx/p-Si diodes by high pressure, low temperature oxidation of Si(100) and Si(111);Semiconductor Science and Technology;1992-01-01
3. Effect of pre-oxidation HF treatment on the tunnel oxide (SiOx) grown at high pressure;Thin Solid Films;1991-12
4. Studies on Evaporated Indium Tin Oxide (ITO)/Silicon Junctions and an Estimation of ITO Work Function;Journal of The Electrochemical Society;1991-01-01
5. Silicon device miniaturazation and its effect on processing techniques;Microelectronics Journal;1989-07
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