Auger electron spectroscopy studies of interfacial reactions in metal/semiconductor multilayers activated during differential scanning calorimetry measurements-Reference-Cited by-同舟云学术

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Auger electron spectroscopy studies of interfacial reactions in metal/semiconductor multilayers activated during differential scanning calorimetry measurements

Published:1993-12 Issue:1-2 Volume:236 Page:169-172
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zalar A.,Hofmann S.,Pimentel F.,Panjan P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Silicides for VLSI Applications;Murarka,1983

2. VLSI Technology;Sze,1988

3. Structure and growth kinetics of Ni2Si on silicon

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1. Characterization of NiAl thin layers by AES and EXAFS;Surface and Interface Analysis;2002

2. Effect of Ion Beam Mixing and Compound Formation on Sputter Depth Profile of a Ta/Si Multilayer Thin Film;Surface and Interface Analysis;1996-06

3. Surface Analysis: X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy;Analytical Chemistry;1996-01-01

4. Interface reactions of an Ag/Cr/AlN sandwich during annealing between 250 and 650 °C;Thin Solid Films;1995-11

5. Early-stage diffusion processes at Si/Me and Me/Me interfaces;Vacuum;1995-08

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