Mass spectrometric analysis during the vapor deposition of amorphous silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. H. Mell and M.H. Brodsky, to be published.
2. Determination of Adsorption Energy Heterogeneity of Solid Surfaces
3. Mass Spectra Analyses of Impurities and Ion Clusters in Amorphous and Crystalline Silicon Films
4. Comparative study of Si(111), silicon oxide, SiC and Si3N4 surfaces by secondary ion mass spectroscopy (SIMS)
5. Observations on Bayard–Alpert Ion Gauge Sensitivities to Various Gases
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1. Photoemission study ofSiOx(0≤x≤2) alloys;Physical Review B;1988-05-15
2. Densimetry of Amorphous Silicon Films by Using a Quartz Oscillator;Japanese Journal of Applied Physics;1986-08-20
3. Influence of sputtering conditions on H content and SiH bonding in aSi: H alloys;Journal of Non-Crystalline Solids;1981-07
4. Optical Absorption of Matrix Isolated Li, Na, Si and Ge Clusters and Micro-crystals;Growth and Properties of Metal Clusters;1980
5. Growth and Structure of Amorphous and Polycrystalline Thin Films;Polycrystalline and Amorphous Thin Films and Devices;1980
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