The influence of multi-layered kinetics on the selection of the primary phase during the diffusion-controlled growth of titanium-silicide layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. Silicides for VLSI Applications;Murarka,1983
2. The C49 to C54 Phase Transformation in TiSi2 Thin Films
3. Kinetics of TiSi2formation by thin Ti films on Si
4. Lateral growth of titanium silicide over a silicon dioxide layer
5. Thin film interaction between titanium and polycrystalline silicon
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