The effect of ion bombardment on some properties of a-Si0.8Ge0.2:H alloys prepared by ion beam-assited reactive evaporation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference50 articles.
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1. Influences of electrode separation on structural properties of μc-Si1-xGex：H thin films;Acta Physica Sinica;2014
2. FT-IR and XPS analysis of a-Si1-xGex:H thin films;Renewable Energy;2003-05
3. Optoelectronic properties of a-Si1−xGex:H thin films;Renewable Energy;2001-11
4. a-SiSnx:H thin films prepared by ion beam assisted deposition;Thin Solid Films;1996-09
5. Hydrogen bonding and void microstructure of a-Ge:H films;Journal of Applied Physics;1996
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