Low temperature plasma anodic oxidation of silicon through thin aluminium overlayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Silicon Oxidation in an Oxygen Plasma Excited by Microwaves
2. Anodization of Silicon in RF Induced Oxygen Plasma
3. Low temperature oxidation of silicon using a microwave plasma disk source
4. Plasma oxidation of silicon
5. Oxide film growth on GaAs and silicon substrates by anodization in oxygen plasma and its application to devices and integrated circuit fabrication
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces;Applied Surface Science;2000-10
2. Anomaly in the growth rate of anodic oxide films due to the presence of a (Sm + Sm2O3) overlayer at a GaAs surface;Thin Solid Films;1996-01
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