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Optical properties of a strained GaAs/Si heterostructure after rapid thermal annealing

  • Published:1994-10 Issue:1-2 Volume:250 Page:202-205
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Kim D.Y.,Kang T.W.,Kim T.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal strain relaxation of GaAs overgrown on nanovoid based Ge/Si substrate;Journal of Crystal Growth;2023-12

2. The growth of low-threading-dislocation-density GaAs buffer layers on Si substrates;Journal of Physics D: Applied Physics;2023-07-11

3. GaAs-based optoelectronics grown on GaAs/Si virtual substrates with multiple spaced thermal-cycle annealing;Thin Solid Films;2021-09

4. Growth and characterization of lithium chloride doped KDP crystals: a DFT and experimental approach;Ferroelectrics;2021-01-25

5. Growth of II-VI/III-V heterovalent quantum structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-03
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